2SC5548A 2005-02-01 1 toshiba transistor silicon npn triple diffused type 2SC5548A high voltage switching applications switching regulator applications dc-dc converter applications ? high speed switching: t r = 0.5 s (max), t f = 0.3 s (max) (i c = 0.8 a) ? high collector breakdown voltage: v ceo = 400 v ? high dc current gain: h fe = 40 (min) (i c = 0.2 a) maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 600 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 7 v dc i c 2 collector current pulse i cp 4 a base current i b 0.5 a ta = 25c 1.0 collector power dissipation tc = 25c p c 15 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c unit: mm jedec D jeita D toshiba 2-7b1a weight: 0.36 g (typ.) jedec D jeita D toshiba 2-7j1a weight: 0.36 g (typ.)
2SC5548A 2005-02-01 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 480 v, i e = 0 D D 20 a emitter cut-off current i ebo v eb = 7 v, i c = 0 D D 10 a collector-base breakdown voltage v (br) cbo i c = 1 ma, i e = 0 600 D D v collector-emitter breakdown voltage v (br) ceo i c = 10 ma, i b = 0 400 D D v h fe (1) v ce = 5 v, i c = 1 ma 20 D D dc current gain h fe (2) v ce = 5 v, i c = 0.2 a 40 D 100 collector emitter saturation voltage v ce (sat) i c = 0.8 a, i b = 0.1 a D D 1.0 v base-emitter saturation voltage v be (sat) i c = 0.8 a, i b = 0.1 a D D 1.3 v rise time t r D D 0.5 storage time t stg D D 3.0 switching time fall time t f i b1 = 0.1 a, i b2 = ? 0.2 a duty cycle 1% D D 0.3 s marking c5548a lot no. a line indicates lead (pb)-free package or lead (pb)-free finish. part no. (or abbreviation code) i b1 20 s v cc 200 v input out- pu t 250 ? i b21 i b1 i b2 i c
2SC5548A 2005-02-01 3 base-emitter saturation voltage v be (sat) (v) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector current i c (a) h fe ? i c dc current gain h fe collector current i c (a) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) v be (sat) ? i c base-emitter voltage v be (v) i c ? v be collector current i c (a) collector power dissipation p c (w) ambient temperature ta (c) p c ? ta 40 60 100 0 0 common emitter tc = 2 5 c 150 i b = 10 ma 80 20 1.6 1.2 0.4 2 4 6 8 10 0.8 2.0 200 0.01 10 common emitter i c /i b = 8 tc = 100c ? 55 25 3 0.3 0.03 0.03 0.3 1 10 1 0.1 0.1 3 1000 1 0.001 common emitter v ce = 5 v tc = 100c ? 55 25 0.003 0.01 0.03 0.1 0.3 1 300 3 100 30 10 3 10 0.01 tc = 100c 25 ? 55 3 0.3 0.1 0.1 0.3 3 common emitter i c /i b = 8 0.03 1 1 (1) tc = ta infinite heat sink (2) no heat sink 0 0 25 50 75 100 125 150 175 200 4 8 12 16 20 (1) (2) 0.4 2.0 0 1.6 0.8 1.2 1.6 0.4 0.8 1.2 common emitter v ce = 5 v tc = 100c ? 55 25 0
2SC5548A 2005-02-01 4 r th ? t w transient thermal resistance r th (c/w) collector-emitter voltage v ce (v) safe operating area collector current i c (a) pulse width t w (s) collector current i c (a) switching characteristics ? i c switching time (s) i c = 8i b1 2i b1 = ? i b2 v cc 200 v pulse width = 20s duty cycle 1 tc = 25c 5 0.1 0.1 0.3 0.5 1 3 5 10 1 3 0.3 0.5 t stg t f curves should be applied in thermal limited area. (single nonrepetitive pulse) (1) infinite heat sink (2) no heat sink 300 0.5 0.001 1000 0.01 0.1 1 10 100 1 3 10 5 30 100 50 (1) (2) *: single nonrepetitive pulse tc = 2 5 c curves must be derated linearly with increase in temperature. i c max (continuous) 0.001 10 dc operation tc = 25c 1 ms* 10 ms* v ceo max 100 s* 100 ms* i c max (pulsed)* 1 3 100 1000 10 30 300 0.1 1 0.01 10 s* 3 5 0.3 0.5 0.03 0.05 0.003 0.005
2SC5548A 2005-02-01 5 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality an d reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use
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